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Devices
/ Characteristics
- NPN
Beta 80-350
Vceo > 40 Volts
Vcer > 60 Volts
f = 400MHz
- Deep Base LPNP
Beta > 50
Vceo > 60 Volts
f = 6 MHz
- Resistors
Diffused 200 ohm/sq
Implanted 2000 ohm/sq
- Capacitors
.084 pf/sq mil
- SBL/lso Breakdown > 60 Volts
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Process
Features
- Bipolar
- Topside Isolated
- N+ Sinkers
- Deep Base LPNP (1 Extra Mask)
- Implanted Resistors (1Extra Mask)
- 1 Epi Layer
- 8 Mask Levels (Single Layer Metal)
- Logic Option (12L - 1 Extra Mask)
- Dual Level Metal (3 Extra Masks)
(Polyimide Dual Dielectric)
- Same Core Processes As
Medium Voltage Bipolar Process
- Projection Photolithography
with 4 Micron Minimum Feature
Size
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