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Devices/Characteristics
- Low Voltage
Tox = 400 Angstroms
Kn = 2.66e-5 Vtn = 0.6 - 0.95
Kp = 7.82e-6 Vtp = 0.7 - 1.10
f = 400MHz
- High Voltage
Tox = 630 Angstroms
Rdsn = 3k ohms/µ
Rdsp = 13k ohms/µ
- NPN Beta = 75 - 150
- Linear
Cp1-p2 = 0.8625 FF/µ2
Cp1-Next = 0.5750 FF/µ2
Rp2 implant = 750 ohms/square
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Process/Devices
Available
- N-Well CMOS with DoubleLevel
Metal
- HV Module Adds P-ext and Thick
gate
Lateral DMOS
Isolate N-channel
High Voltage N- and P-channel
NPN
Substrate PNP
-Linear
Next, Cp1-Next and Rnext
Poly 2, Cp1-p2 and EPROM
Resistor 750 ohm/square
added to the - - Poly2 level
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Options
- Standard Process 11 masks
- HV Module 2 masks
- Next 1 mask
- Poly 2 1 mask
- Resistor 1 mask
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Applications
- General Purpose Mixed Signal
- 30V Continuous, 40V Transients
- Power Lateral DMOS <1Amp
- Digital Low Voltage Applications
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