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CMOS Product Line
Designs and manufactures cost effective CMOS ICs for a wide range of customer applications.
Includes products for digital, mixed signal, full analog, high voltage or moderate power.
Utilizes mature process for very high volume automotive needs since 1994.
Provides low cost modular CMOS solutions with high voltage 30V continuous, 40V transient or add DMOS for up to 1A.

High Voltage CMOS


Devices/Characteristics
- Low Voltage
    Tox = 400 Angstroms
    Kn = 2.66e-5 Vtn = 0.6 - 0.95
    Kp = 7.82e-6 Vtp = 0.7 - 1.10
    f = 400MHz
- High Voltage
    Tox = 630 Angstroms
    Rdsn = 3k ohms/µ
    Rdsp = 13k ohms/µ
- NPN Beta = 75 - 150
- Linear
    Cp1-p2 = 0.8625 FF/µ2
    Cp1-Next = 0.5750 FF/µ2
    Rp2 implant = 750 ohms/square

Process/Devices Available
- N-Well CMOS with DoubleLevel
  Metal
- HV Module Adds P-ext and Thick
  gate
    Lateral DMOS
    Isolate N-channel
    High Voltage N- and P-channel
    NPN
    Substrate PNP
-Linear
    Next, Cp1-Next and Rnext
    Poly 2, Cp1-p2 and EPROM
    Resistor 750 ohm/square
      added to the - - Poly2 level

Options
- Standard Process 11 masks
- HV Module 2 masks
- Next 1 mask
- Poly 2 1 mask
- Resistor 1 mask

Applications
- General Purpose Mixed Signal
- 30V Continuous, 40V Transients
- Power Lateral DMOS <1Amp
- Digital Low Voltage Applications

 
 

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